SQD40N04-10A
www.vishay.com
THERMAL RATINGS (T A = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
Vishay Siliconix
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
? The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68847 .
S11-2046-Rev. B, 24-Oct-11
6
Document Number: 68847
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SQD50N02-04-GE3 MOSFET N-CH D-S 20V 50A TO252
SQD50P04-09L-GE3 MOSFET P-CH D-S 40V TO252
SQD50P04-13L-GE3 MOSFET P-CH D-S 40V TO252
SQD50P06-15L-GE3 MOSFET P-CH 60V 50A TO252
SQJ412EP-T1-GE3 MOSFET N-CH D-S 40V PPAK 8SOIC
SQJ461EP-T1-GE3 MOSFET P-CH D-S 60V TO252
SQJ469EP-T1-GE3 MOSFET P-CH 80V 32A PPAK 8SOIC
SQJ844EP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
相关代理商/技术参数
SQD40N06-14L 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQD40N06-14L-GE3 功能描述:MOSFET 55V 40A 75W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQD40N06-25L-GE3 功能描述:MOSFET 60V 30A 75W 22mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQD40N10-25-GE3 功能描述:MOSFET 100V 40A 136W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQD40N10-40L 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:Automotive N-Channel 100 V (D-S) 175 ?°C MOSFET
SQD40P10-40L 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:Automotive P-Channel 100 V (D-S) 175 ?°C MOSFET
SQD40P10-40L-GE3 制造商:Vishay Semiconductors 功能描述:
SQD40SC100 制造商:Ohmite Mfg Co 功能描述: